A 140 GHz Heterodyne Receiver Chipset for Passive Millimeter Wave Imaging Applications
A 140 GHz Heterodyne Receiver Chipset for Passive Millimeter Wave Imaging Applications
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适用于无源毫米波成像应用的 140 GHz 外差接收器芯片组
DOI：
10.1109/csics.2009.5315792
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
S. Saito
中科院分区：
文献类型：
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作者：
S. Koch;M. Guthoerl;I. Kallfass;A. Leuther;S. Saito
介绍了一种用于140 GHz被动毫米波成像的外差接收芯片组。该芯片组由两个不同的毫米波单片集成电路(MIMIC)组成：工作在35 GHz频段的压控振荡器(VCO)和接收芯片，其中包括低噪声放大器、下变频混频器、倍频器和本地振荡器缓冲放大器以及本地振荡器分配网络。两种芯片均采用最新的100 nm栅长变形InAlAs/InGaAsHEMT(高电子迁移率晶体管)技术，在50μm厚、直径4英寸的GaAs衬底上实现。这些芯片采用了接地共面波导(GCPW)技术。在120-145 GHz的工作频段内，该接收机的噪声系数约为5分贝，转换增益在-1至2分贝之间。该压控振荡器可以从31 GHz到37 GHz进行调谐，相关的输出功率电平从-2 dBm到+2 dBm。对所有积木进行了详细的说明，并给出了测量结果。最后给出了接收机的总体性能。
A heterodyne receiver chipset for 140 GHz passive millimeter wave imaging applications is presented in this paper. The chipset consists of two different millimeter wave monolithic integrated circuits (MIMICs): a voltage controlled oscillator (VCO) working in the 35 GHz frequency range and a receiver chip hosting a low noise amplifier, a down-conversion mixer, a frequency multiplier and a local oscillator buffer amplifier together with a local oscillator distribution network. Both chips presented are realized using latest 100 nm gatelength metamorphic InAlAs / InGaAs HEMT (high electron mobility transistor) technology on 50 μm thick and 4 inch diameter GaAs substrates. The chips are utilizing grounded coplanar waveguide (GCPW) technology. Within the frequency band of operation from 120 to 145 GHz the receiver is showing a noise figure of ~ 5 dB and a conversion gain between -1 and 2 dB. The voltage controlled oscillator can be tuned from 31 to 37 GHz with associated output power levels from -2 to +2 dBm. All building blocks are explained in detail and measured results are presented. Finally the overall receiver performance is given.