AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template
AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template
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DOI：
10.1088/0256-307x/25/1/070
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发表时间：
2008
影响因子：
3.5
通讯作者：
Sang Liwen;Qin Zhi-xin;Cen Long-Bin;Shen Bo;Zhang Guoyi;Liu Shuping;Chen Hangyang;Liu Da-Yi;Kang Jun-yong;Cheng Cai-jing;Zhao Hong-yan;Lu Zhengxiong;Ding Jiaxin;Z. Lan;Si Jun-jie;Sun Weiguo
中科院分区：
文献类型：
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作者：
Sang Liwen;Qin Zhi-xin;Cen Long-Bin;Shen Bo;Zhang Guoyi;Liu Shuping;Chen Hangyang;Liu Da-Yi;Kang Jun-yong;Cheng Cai-jing;Zhao Hong-yan;Lu Zhengxiong;Ding Jiaxin;Z. Lan;Si Jun-jie;Sun Weiguo
我们报道了基于AlGaN的背照式日盲肖特基型紫外光电探测器，其截止波长为280nm至292nm，无偏置。该器件在 5 V 反向偏压下表现出 2.1 × 10−6A/cm2 的低暗电流。比探测率 D* 估计为 3.3 × 1012cmHz1/2 W−1。为了保证光电探测器的性能，对肖特基接触的AlGaN生长和退火条件进行了优化。结果表明，Ni/Pt肖特基接触的高温退火方法对于降低漏电流是有效的。
We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 × 10−6A/cm2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 1012cmHz1/2 W−1. To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.