Solid-state memcapacitive system with negative and diverging capacitance
Solid-state memcapacitive system with negative and diverging capacitance
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DOI：
10.1103/physrevb.81.195430
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发表时间：
2010-05-15
影响因子：
3.7
通讯作者：
Pershin, Yu V.
中科院分区：
文献类型：
--
作者：
Martinez-Rincon, J.;Di Ventra, M.;Pershin, Yu V.
我们建议了一种可能的固态存储电容(Memacitive)系统的实现。我们的方法依赖于常规电容器极板之间介质的缓慢极化速率。为了实现这一目标，我们考虑在电容器中嵌入多层结构。该多层结构由由绝缘体隔开的金属层形成，从而可以在层之间发生非线性电子传输(隧穿)。该电容在一定的电场范围内表现出滞后的电荷-电压曲线和电容-电压曲线，以及负电容和发散电容。这一方案易于在实验上实现，表明了在记忆电容系统中存储信息的可能性。
We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a multilayer structure embedded in a capacitor. The multilayer structure is formed by metallic layers separated by an insulator so that nonlinear electronic transport (tunneling) between the layers can occur. The suggested memcapacitor shows hysteretic charge-voltage and capacitance-voltage curves, and both negative and diverging capacitance within certain ranges of the field. This proposal can be easily realized experimentally and indicates the possibility of information storage in memcapacitive systems.