High-surface-area SnO2:: a novel semiconductor-oxide gas sensor
High-surface-area SnO2:: a novel semiconductor-oxide gas sensor
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DOI：
10.1016/s0167-577x(97)00142-0
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发表时间：
1998-02-01
影响因子：
3
通讯作者：
Kawi, S
中科院分区：
文献类型：
--
作者：
Li, GJ;Kawi, S
采用表面活性剂掺杂法制备了高比表面积SnO2传感器材料。经723K焙烧后，比表面积达到156.8 m(2)/g。以氢气为探测气体，研究了高比表面积SnO2材料的传感特性。结果表明，传感器表面积与其对H-2的灵敏度之间存在线性关系。(C)1998年爱思唯尔科学公司。
High surface area SnO2 sensor materials were systematically synthesized by a surfactant incorporating method. After calcination at 723 K, a high BET surface area of 156.8 m(2)/g was obtained. The sensing properties of the high surface area SnO2 material were studied using H-2 as the probing gas. It is found that a linear relationship exists between sensor surface area and its sensitivity to H-2. (C) 1998 Elsevier Science B.V.