Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes
Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes
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DOI：
10.1016/s0038-1101(02)00023-0
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发表时间：
2002-08-01
影响因子：
1.7
通讯作者：
Walker, D
中科院分区：
文献类型：
--
作者：
Cao, XA;Stokes, EB;Walker, D
我们研究了在GaN/InGaN基发光二极管（LED）上沉积Ni/Au双层薄膜并在550 ℃空气中退火后的光学和电学性质。Ni的氧化以及所得NiO与Au的混合导致透明度和电阻率的显着增加。具有小Au：Ni比率的金属层（
We have studied the optical and electrical properties of Ni/Au bilayer thin films deposited on GaN/InGaN-based light emitting diodes (LEDs) followed by annealing in air at 550 degreesC. Oxidation of Ni and intermixing of the resultant NiO with Au lead to a dramatic increase of transparency and resistivity. Metal layers with small Au:Ni ratios (