Exciton relaxation and level repulsion in GaAs'Al x Ga 1¿x As quantum wires
Exciton relaxation and level repulsion in GaAs'Al x Ga 1¿x As quantum wires
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GaAsAl x Ga 1¿ 中的激子弛豫和能级排斥
DOI：
10.1103/physrevb.69.205321
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发表时间：
2004
影响因子：
3.7
通讯作者：
M. Ogura
中科院分区：
文献类型：
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作者：
A. Feltrin;R. I. Kaitouni;A. Crottini;M. Dupertuis;J. Staehli;B. Deveaud;V. Savona;Xue;M. Ogura
利用低温扫描近场光学显微镜对V型槽GaAs/AlGaAs量子线进行了空间分辨光致发光谱研究。光谱沿着的电线功能几个尖锐的发射线，这被理解为从激子的限制势的不均匀性本地化状态的发射。预期这些激子状态在空间上重叠并且它们的能量是相关的，这导致能级排斥。根据自相关函数的光谱的统计分析清楚地揭示了这种效果。为了模拟光致发光，而不是吸收光谱，我们进行详细的模拟激子弛豫和发光动力学在一个无序的一维系统，考虑到我们的无序模型中的V型槽底部的小平面的现实结构。结合近场测量和数值模拟，我们表明，无序防止激子的充分放松对当地的基态在无序势的下降。结果，观察到来自激发态的发光。我们确定的局域态的起源所观察到的水平排斥的空间和能量之间的相关性，并讨论在此机制中的V型槽底部的两个方面所发挥的作用。该分析还突出了在该实验和类似实验中观察到的宽光致发光背景的相关性。我们建议解释这个广泛的背景的起源强激子声学声子耦合，导致在每个本地化状态的频谱中的声子边带。
V groove GaAs/AlGaAs quantum wires are investigated by spatially resolved photoluminescence spectroscopy using a low-temperature scanning near-field optical microscope. The spectra along the wires feature several sharp emission lines, which are understood as the emission from exciton states localized in inhomogeneities of the confining potential. It is expected that these exciton states spatially overlap and that their energies are correlated, which leads to level repulsion. The statistical analysis of the spectra in terms of autocorrelation functions clearly reveals this effect. In order to model photoluminescence rather than absorption spectra, we perform detailed simulations of exciton relaxation and luminescence kinetics in a disordered one-dimensional system, taking into account the realistic structure of the facets at the bottom of the V groove in our disorder model. Combining near-field measurements and numerical simulations we show that disorder prevents the full relaxation of excitons towards the local ground states in the dips of the disordered potential. As a consequence, luminescence from excited states is observed. We identify in the spatial and energy correlation between localized states the origin of the observed level repulsion and discuss the role played by the two facets at the bottom of the V groove in this mechanism. This analysis also highlights the relevance of the broad photoluminescence background observed in this and in analogous experiments. We propose as explanation for the origin of this broad background the strong exciton-acoustic phonon coupling that results in phonon sidebands in the spectrum of each localized state.
S. Matsubara：“4. 体内典型和非典型抗精神病药物对多巴胺 D-1、D-2 和血清素 2 受体的占用。”
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通过生长中断退火的解理边缘过度生长形成的高均匀性量子线激光器
DOI：
--
发表时间：
2003
期刊：
Solid State Communications 127
影响因子：
--
作者：
H.Akiyama;M.Yoshita;L.N.Pfeiffer;K.W.West
通讯作者：
K.W.West