Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy
Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy
复制标题
自由基源分子束外延生长蓝宝石 a 面上 ZnO 外延膜激子极化子发射的观察
DOI：
10.1143/jjap.41.l935
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发表时间：
2002
影响因子：
1.5
通讯作者：
S. Niki
中科院分区：
文献类型：
--
作者：
S. Chichibu;T. Sota;P. Fons;K. Iwata;A. Yamada;K. Matsubara;S. Niki
利用自由基源分子束外延技术在蓝宝石a面上生长ZnO外延膜，在8 K下观察到激子极化激元发射。相应的光反射结构的共振能与纵向和横向激子的共振能一致，即上极化激元分支和下极化激元分支，其中A，B和C激子同时耦合到电磁波。与GaN的结果相反，B-激子极化激元的横向分裂得到解决，这是由于大的振子强度。
Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.