Line defects in two-dimensional four-beam interference patterns
Line defects in two-dimensional four-beam interference patterns
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DOI：
10.1088/1367-2630/10/2/023023
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发表时间：
2008-02
影响因子：
3.3
通讯作者：
C. Tan;C. Peng;V. N. Petryakov;Yu. K. Verevkin;J. Zhang;Z. Wang;S. Olaizola;T. Berthou;S. Tisserand;M. Pessa
中科院分区：
文献类型：
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作者：
C. Tan;C. Peng;V. N. Petryakov;Yu. K. Verevkin;J. Zhang;Z. Wang;S. Olaizola;T. Berthou;S. Tisserand;M. Pessa
我们研究了由四光束干涉光刻产生的 GaAs 衬底表面上的线缺陷组成的激光干涉图案。缺陷的方向和周期性取决于入射激光束的配置，而缺陷的宽度通过改变光束强度来改变。讨论了相位和偏振对模拟图案的影响。
We have studied laser interference patterns, which consist of line defects on the surface of a GaAs substrate, generated by four-beam interference lithography. The orientation and periodicity of the defects are shown to depend on the configuration of the incident laser beams, while the widths of the defects are modified by varying the beam intensity. Influences of the phase and polarization on the simulated patterns are discussed.