AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS
AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS
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DOI：
10.1088/0022-3719/16/21/017
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发表时间：
1983-01-01
期刊：
影响因子：
--
通讯作者：
HAUG, A
中科院分区：
文献类型：
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作者：
HAUG, A
考虑到实际的能带结构，而不是使用通常的抛物线近似，重新研究了直接带隙半导体中的俄歇复合。结果发现，在大能隙半导体中（E g> 或= 0.6 eV），直接导带过程可以忽略不计，这与使用抛物线近似所发现的结果相反。价带过程和声子辅助俄歇过程的概率的新值也被发现更小，但幅度不大。总而言之，获得了较小的总俄歇重组值，并且这些值与实验结果一致。此外，除了载流子浓度极高（n>或= 10 20 cm-3）之外，载流子简并性的影响很弱。最后，讨论了俄歇系数定量值所涉及的不确定性。
Auger recombination in direct-gap semiconductors is reinvestigated taking into account a realistic band structure instead of using the usual parabolic approximation. It is found that the direct conduction band process is negligible in large-gap semiconductors (E g> or= 0.6 eV), contrary to what has been found using the parabolic approximation. The new values for the probabilities of the valence band process and of the phonon-assisted Auger processes are also found to be smaller, but not by so much. Altogether, smaller values for the total Auger recombination are obtained and these are in agreement with experimental results. In addition, the effect of carrier degeneracy is shown to be weak, apart from where carrier concentrations are extremely high (n> or= 10 20 cm-3). Finally, the uncertainties involved in the quantitative values of the Auger coefficients are discussed.