Strong terahertz emission from (100) p-type InAs
Strong terahertz emission from (100) p-type InAs
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DOI：
10.1063/1.2149161
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发表时间：
2005-12
影响因子：
3.2
通讯作者：
R. Mendis;M. L. Smith;L. Bignell;R. Vickers;R. Lewis
中科院分区：
文献类型：
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作者：
R. Mendis;M. L. Smith;L. Bignell;R. Vickers;R. Lewis
在近红外辐射的 fs 脉冲照射下，从 (100) Zn 受体掺杂的 InAs 观察到太赫兹发射。围绕表面法线转动晶体，无论入射角是 45° 还是 75°，每次旋转都会产生两个最大值，而 (111) p-InAs 则报告每次旋转会产生三个最大值。发射的太赫兹功率随泵浦功率呈二次方变化，并在 20-300K 范围内随着温度的升高而降低。这种行为与光电流浪涌一致，光电流浪涌是低激发通量下主要的太赫兹产生机制。 p 型 InAs 产生的功率比标准无偏太赫兹发射器（1 毫米厚的 ZnTe）高出约两个数量级。
Terahertz emission has been observed from (100) Zn-acceptor-doped InAs under illumination by fs pulses of near-infrared radiation. Turning the crystal about the surface normal produces two maxima per rotation, whether the angle of incidence is 45° or 75°, in contrast to (111) p-InAs, where three maxima per rotation have been reported. The emitted terahertz power has a quadratic variation with the pump power and decreases with increasing temperature in the range 20–300K. This behavior is consistent with a photocurrent surge being the dominant terahertz generating mechanism at low excitation fluences. The p-type InAs generates about two orders of magnitude more power than the standard unbiased terahertz emitter, 1mm thick ZnTe.