Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices.
Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices.
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DOI：
10.1038/s41467-017-00987-6
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发表时间：
2017-10-12
影响因子：
16.6
通讯作者：
Srinivasan K
中科院分区：
文献类型：
--
作者：
Davanco M;Liu J;Sapienza L;Zhang CZ;De Miranda Cardoso JV;Verma V;Mirin R;Nam SW;Liu L;Srinivasan K
单量子发射器是光子量子技术的重要资源，构成了单光子源、静态量子比特和确定性量子门的构建模块。这些功能的稳健实现是通过提供强的光-物质相互作用和发射器与光场之间的低损耗接口的系统来实现的。在单节点级别提供这种功能的现有平台提出了严峻的可扩展性挑战。在这里，我们开发了一个异构的光子集成平台，提供了这样的能力，在一个可扩展的片上实现，允许直接集成GaAs波导和腔含有自组装InAs/GaAs量子点-一个成熟的固态量子发射器类-低损耗氮化硅波导。我们展示了Si 3 N4波导和GaAs几何结构中的单量子点之间的高效光学界面，其性能接近针对每种材料单独优化的器件。这包括微腔中量子点辐射率的增强，以及达到非微扰强耦合机制的途径。在量子光子学中有效地使用单个发射器需要相干发射、强的光-物质耦合、低损耗和可扩展的制造。在这里，Davanco等人通过Si 3 N4波导和GaAs纳米光子几何结构与InAs量子点的混合芯片上集成向这一目标迈进。
Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light–matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots—a mature class of solid-state quantum emitter—with low-loss Si3N4 waveguides. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong-coupling regime. Effective use of single emitters in quantum photonics requires coherent emission, strong light-matter coupling, low losses and scalable fabrication. Here, Davanco et al. stride toward this goal by hybrid on-chip integration of Si3N4 waveguides and GaAs nanophotonic geometries with InAs quantum dots.
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