Hermetic packaging for implantable microsystems: Effectiveness of sequentially electroplated AuSn alloy
Hermetic packaging for implantable microsystems: Effectiveness of sequentially electroplated AuSn alloy
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DOI：
10.1109/embc.2018.8513272
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发表时间：
2018-07
期刊：
影响因子：
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通讯作者：
K. Szostak;T. Constandinou
中科院分区：
文献类型：
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作者：
K. Szostak;T. Constandinou
随着现代微技术的发展，尽管集成度和整体复杂性不断提高，但智能设备仍在积极小型化。因此，实现可靠、紧凑包装变得越来越重要。对于植入式医疗设备(IMD)，包装还必须提供高质量的密封环境，以保护设备免受人体的伤害。对于芯片级器件，AuSn共晶键合提供了形成实现超低渗透性的紧凑密封的可能性。一个关键特点是可以在低于350315°C的工艺温度下实现这一点，因此允许在单个封装中集成传感器和微系统与cmos电子设备。然而，诸如焊料润湿、空洞形成和成分控制等问题使得形成高质量的可重复密封件具有极大的挑战性。针对这一目标，本文介绍了我们的共晶堆积沉积的实验工作。我们详细介绍了我们的设计方法和工艺流程，分享了我们在控制电化学沉积AuSn合金方面的经验，最后讨论了连续电镀工艺形成密封共晶键的可行性。
With modern microtechnology, there is an aggressive miniaturization of smart devices, despite an increasing level of integration and overall complexity. It is therefore becoming increasingly important to be achieve reliable, compact packaging. For implantable medical devices (IMDs), the package must additionally provide a high quality hermetic environment to protect the device from the human body. For chip-scale devices, AuSn eutectic bonding offers the possibility of forming compact seals that achieve ultra-low permeability. A key feature is this can be achieved at process temperatures of below 350315°C, therefore allowing for the integration of sensors and microsystems with CMOS electronics within a single package. Issues however such as solder wetting, void formation and controlling composition make formation of high-quality repeatable seals highly challenging. Towards this aim, this paper presents our experimental work characterizing the eutectic stack deposition. We detail our designmethods and process flow, share our experiences in controlling electrochemical deposition of AuSn alloy and finally discuss usability of sequential electroplating process for the formation of hermetic eutectic bonds.