Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall
Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall
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DOI：
10.1021/acs.nanolett.0c01911
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发表时间：
2020-08-12
期刊：
影响因子：
10.8
通讯作者：
Wang, Feng
中科院分区：
文献类型：
--
作者：
Jiang, Lili;Wang, Sheng;Wang, Feng
双层石墨烯中的叠层畴壁是一种拓扑缺陷，它对双层石墨烯的电子性质有很大影响，从而导致非平凡的输运行为。电子如何在两个相邻的堆叠畴之间跳跃是层堆叠畴壁中一个突出的问题。在这里，我们报告的第一个实验观察电子输运双层石墨烯畴壁相结合的近场红外纳米显微镜和扫描电压显微镜技术。我们观察到显着不同的电子输运行为的拉伸和剪切型畴壁。张力型畴壁对低能入射电子具有高度反射性，但当电子密度和费米能通过静电门控增加时变得更加透明。相反，剪切型畴壁在不同的栅电压下总是高度透明的。这种依赖于孤子的电子输运可以开辟新的途径，以设计基于双层石墨烯中的层堆叠畴壁的新型纳米电子器件。
Layer-stacking domain wall in bilayer graphene is one type of topological defects that can greatly affect the electronic properties of bilayer graphene and therefore lead to nontrivial transport behaviors. An outstanding question on the layer stacking domain wall is how the electrons hop between two adjacent stacking domains. Here we report the first experimental observation of electronic transport across bilayer graphene domain walls by combining near-field infrared nanoscopy and scanning voltage microscopy techniques. We observe markedly different electron transport behaviors across the tensile- and shear-type domain walls. The tensile-type domain wall is highly reflective of low-energy incident electrons, but becomes more transparent when the electron density and the Fermi energy are increased by electrostatic gating. In contrast, the shear-type domain wall is always highly transparent at different gate voltages. Such soliton-dependent electronic transport can open up new routes to engineer novel nanoelectronic devices based on layer-stacking domain walls in bilayer graphene.