Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability
Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability
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具有 4.9 MW/cm2 功率密度处理能力的 4H-SiC 双极结晶体管的功耗和高温操作分析
DOI：
10.4028/www.scientific.net/msf.457-460.1121
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
B. van Zeghbroeck
中科院分区：
文献类型：
--
作者：
I. Perez;J. Torvik;B. van Zeghbroeck
我们报告了功率耗散密度高达 4.9 MW/cm 2 且工作温度高达 500°C 的 4H-SiC 双极结型晶体管的设计、制造、测试和分析。这一创纪录的功率密度归因于 SiC 的高导热性和在高结温下工作的能力。结温是从 35°C、65°C 和 95°C 环境温度下测得的共发射极 I-V 特性中提取的。我们发现结温可以很好地拟合简单的热传导模型，并且测量的电流增益取决于结温和环境温度。
We report on the design, fabrication, testing and analysis of 4H-SiC bipolar junction transistors with power dissipation density up to 4.9 MW/cm 2 and operation up to 500°C. This record power density is attributed to the high thermal conductivity of the SiC and the ability to operate at a high junction temperature. The junction temperature was extracted from the measured common emitter I-V characteristics at ambient temperatures of 35°C, 65°C and 95°C. We found that the junction temperature can be well fitted to a simple heat conduction model and that the measured current gain depends on both the junction temperature as well as the ambient temperature.