High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
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DOI：
10.1063/1.1805199
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发表时间：
2004-10
影响因子：
4
通讯作者：
Guan-Ting Chen;C.-C. Pan-C.;Chi-Shin Fang;Tzu-Chien Huang;J. Chyi;M. Chang;Sheng-Bang Huang;Hsu Jung-Tsung
中科院分区：
文献类型：
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作者：
Guan-Ting Chen;C.-C. Pan-C.;Chi-Shin Fang;Tzu-Chien Huang;J. Chyi;M. Chang;Sheng-Bang Huang;Hsu Jung-Tsung
研究了Pd / Ni / Al / Ti / Au欧姆接触对p型GaN的热稳定性、光学反射率和接触电阻率。与Pd / Al / Ti / Au相比，Pd / Ni / Al / Ti / Au触点在氮气环境中150°C长期退火后保持了76%的接触电阻率。根据二次离子质谱研究结果，表明Ni层阻止了Ti在热处理过程中渗透到GaN中。
Thermal stability, optical reflectivity, and contact resistivity of Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN were investigated. In contrast to its Pd∕Al∕Ti∕Au counterparts, Pd∕Ni∕Al∕Ti∕Au contacts retained their specific contact resistivity ( 76%) after long-term annealing at 150 °C in nitrogen ambient. According to the results of the secondary ion mass spectroscopy study, it is suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment.