Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array
Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array
复制标题
氮化硅点阵GaAs(311)B衬底上自组织InGaAs/AlGaAs盒状结构阵列的完美空间有序性
DOI：
10.1063/1.120075
复制
发表时间：
1997
影响因子：
4
通讯作者：
H. Kamada
中科院分区：
文献类型：
--
作者：
E. Kuramochi;J. Temmyo;T. Tamamura;H. Kamada
为了提高自组织现象的可控性，利用精细氮化硅(SiN)点阵列研究了在GaAs311)B衬底上自组织生长的应变InGaAsAlGaAs箱状结构的金属有机气相外延生长。在750 °C生长的AlGaAs势垒层埋入了SiN点，由于(−100)面生长和横向生长，在(311)B衬底上形成了新颖的五角形空穴。In0.3Ga0.7As层优先生长在这些空穴中，然后在生长中断期间在这些空穴中形成盒状结构。AlGaAs/In0.3Ga0.7As外延层的连续生长导致了箱状结构的堆积。底盒和上盒的配对概率强烈依赖于正弦点阵列的间距，当正弦点间距在250-300 nm范围内时，可以获得理想的上盒阵列的空间有序。这种方法允许对自形成的盒子结构进行准确的定位。
The metalorganic vapor phase epitaxial growth of strained InGaAs/AlGaAs box-like structure self-organized on GaAs (311)B substrate was investigated using fine silicon nitride (SiN) dot arrays for improving the controllability of self-organization phenomena. AlGaAs barrier layer grown at 750 °C buries SiN dots, forming novel pentagonally shaped hollows on (311)B substrate due to the (−100) facet growth and lateral growth. The In0.3Ga0.7As layer is preferentially grown in these hollows, then box-like structure is formed in these hollows during the growth interruption. Successive growth of AlGaAs/In0.3Ga0.7As epilayers induces the stacking of box-like structures just on top of the bottom boxes. The pairing probability of bottom and upper boxes is strongly dependent on the SiN dot array pitch, and the perfect spatial ordering of upper box arrays is achieved when the SiN dot pitch is in a range of 250–300 nm. This approach allows the exact positioning of self-formed box structure.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H