Coulomb blockade effects at room temperature in thin-film nanoconstrictions fabricated by a novel technique
Coulomb blockade effects at room temperature in thin-film nanoconstrictions fabricated by a novel technique
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新技术制造的薄膜纳米收缩在室温下的库仑封锁效应
DOI：
10.1063/1.122838
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发表时间：
1998
影响因子：
4
通讯作者：
T. Claeson
中科院分区：
文献类型：
--
作者：
S. Kubatkin;A. Danilov;A. Bogdanov;Håkan Olin;T. Claeson
发展了一种在金属薄膜中制备和探测纳米尺寸隧道结构的技术。通过传统的底切电子束光刻掩模进行倾斜蒸发，在原位测量样品电阻时，我们在薄颗粒钯膜中定义了宽度和长度约为10纳米的收缩。研究了金属颗粒网络的隧穿导电性。记录了单电子隧穿晶体管效应。在室温下的静电栅电压可以清楚地调制库仑阻塞偏移的数量级为0.1 V的电流-电压曲线。
A technique was developed to fabricate and probe nanosize tunneling structures in thin metallic films. Using oblique evaporation through conventional undercut electron-beam lithographic masks, as the sample resistance was measured in situ, we defined constrictions with widths and lengths of about 10 nm in thin granular palladium films. The tunneling conductivity through a network of metallic grains was studied. Single electron tunneling transistor effects were registered. An electrostatic gate voltage at room temperature could clearly modulate Coulomb blockade offsets of the order of 0.1 V in the current–voltage curves.