Visible light emission from Si nanocrystalline composites via reactive evaporation of SiO
Visible light emission from Si nanocrystalline composites via reactive evaporation of SiO
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DOI：
10.1016/s0925-3467(01)00024-6
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发表时间：
2001-06
影响因子：
3.9
通讯作者：
U. Kahler;H. Hofmeister
中科院分区：
文献类型：
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作者：
U. Kahler;H. Hofmeister
在可控氧气氛下，通过热蒸发SiO，在Si基片上沉积了氧含量可调的非晶SiO_x层。沉积膜的氧含量由卢瑟福背散射分析确定。SiOxat在1000°C下的分解在SiO2基质中产生良好建立的Si纳米微晶，如高分辨率透射电子显微镜（HRTEM）所示。在1000°C下退火后形成的纳米晶体在可见光至近红外光谱范围内显示出强烈的光致发光（PL）。分析了薄膜的初始氧含量与微晶尺寸和光致发光性能的关系。观察到的PL-峰发射从880下降到750 nm的位移可以解释为在退火过程中由于氧含量增加而形成较小的微晶。
Amorphous SiOxlayers with adjustable oxygen content have been deposited onto Si wafers by thermal evaporation of SiO in controlled O2atmosphere. The oxygen content of the deposited films was determined from Rutherford backscattering analysis. Decomposition of the SiOxat 1000°C yields well established Si nanocrystallites in an SiO2matrix as shown by high resolution transmission electron microscopy (HRTEM). Nanocrystallites formed upon annealing at 1000°C show intense photoluminescence (PL) in the visible to near infrared spectral range. The correlation of the initial oxygen content of the layer with the crystallite size and PL properties is analyzed. The observed shift in PL-peak emission from 880 down to 750 nm can be explained by the formation of smaller crystallites during annealing as a result of increasing oxygen content.