Behaviour Shockley and Sakurai Models in 7nm FinFet
Behaviour Shockley and Sakurai Models in 7nm FinFet
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7nm FinFet 中的 Shockley 和 Sakurai 行为模型
DOI：
10.1109/iemtronics51293.2020.9216418
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Santosh Yachareni
中科院分区：
文献类型：
--
作者：
M. Anees;K. Rahul;Sourabh Aditya Swarnkar;Santosh Yachareni
当我们朝着较低的节点移动时，设备尺寸正在变化，并使用芬费高的通道变得更加复杂。 。 Alpha Power模型是由Sakurai-Newton [1]在安全区域中准确建模的晶体管行为。当节点缩小时，随着速度饱和度的缩小，电压没有任何显着的缩放。设备并不与芬法特（FinFet）同步。
As we move towards lower nodes, device dimensions are changing and becoming more complex. With FinFet’s elevated channel, gate voltage is applied from all 3 directions. The gate electric field is no longer unidirectional. These add complexity in the behavior of current through the channel. Traditional Shockley model which had square law dependency on the over drive voltage in saturation region will no longer hold good. To overcome this shortcoming of the model alpha power model was introduced by Sakurai- Newton [1]. This accurately modeled the transistor behavior in submicron device in saturation region. According to this model the device will not have square dependency in saturation region. But will have power reduced from two to one as node shrinks. As we were scaling the nodes, there wasn’t any significant scaling in the voltage. As the velocity saturation becomes more dominant alpha reaches one. Models designed for the planar devices and are not in sync with the FinFet. Proposed paper describes the behavior of the MOS in 7nm across different voltage condition and comparison of the current behavior predicted from the Shockley’s square law model and Sakurai-Newton’s alpha power model in FinFets.