Pulsed Laser Annealing of Thin Silicon Films
Pulsed Laser Annealing of Thin Silicon Films
复制标题
硅薄膜的脉冲激光退火
DOI：
10.1143/jjap.45.2437
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
S. Higashi
中科院分区：
文献类型：
--
作者：
T. Sameshima;H. Watakabe;N. Andoh;S. Higashi
用30 ns脉冲XeCl准分子激光对石英衬底上平均厚度为2.2 nm的硅薄膜进行了退火处理。结晶发生在激光能量在150和170 mJ/cm2之间。拉曼散射光谱显示了小晶粒、纳米晶和无序非晶态的混合状态。在180 mJ/cm2以上的激光照射下，观察到硅膜的非晶化。在170 mJ/cm2激光照射下，在1.3 ×106 Pa H2O蒸汽中，260°C退火3 h，在18 ~ 130 K约3和2 eV处观察到光致发光。
The 30 ns pulsed XeCl excimer laser annealing of silicon films with an average thickness of 2.2 nm formed on quartz substrates is reported. Crystallization occurred at laser energies between 150 and 170 mJ/cm2. Raman scattering spectra revealed the mixed states of small crystalline grains, and nanocrystalline and disordered amorphous regions. The amorphization of the silicon films was observed for laser irradiation above 180 mJ/cm2. Photoluminescence was observed around at approximately 3 and 2 eV from 18 to 130 K for the films annealed at 260 °C for 3 h in 1.3 ×106 Pa H2O vapor after laser irradiation at 170 mJ/cm2.