Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs
Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs
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DOI：
10.1063/1.4792269
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发表时间：
2013-02
影响因子：
4
通讯作者：
H. Kurebayashi;T. Skinner;K. Khazen;K. Olejník;D. Fang;C. Ciccarelli;R. Campion;B. Gallagher
中科院分区：
文献类型：
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作者：
H. Kurebayashi;T. Skinner;K. Khazen;K. Olejník;D. Fang;C. Ciccarelli;R. Campion;B. Gallagher
我们报告了一个在芯片上，电检测的铁磁共振研究由GaAs/Fe（1 nm）/GaAs层制成的微棒。我们的实验，在几个不同的微波频率和静磁场方向进行，使我们能够观察到一个强大的面内单轴各向异性的线宽。我们属性的线宽各向异性的两个磁振子散射过程中，支持这可能的线宽加宽机制的计算。我们的研究结果是有用的设计未来的高性能的自旋电子器件的基础上的纳米磁性结构。
We report an on-chip, electrically detected ferromagnetic resonance study on microbars made from GaAs/Fe(1 nm)/GaAs layers. Our experiments, performed at several different microwave frequencies and static magnetic field directions, enable us to observe a strong in-plane uniaxial anisotropy of the linewidth. We attribute the linewidth anisotropy to the two magnon scattering process, supporting this by calculations of possible linewidth broadening mechanisms. Our findings are useful for designing future high-performance spintronic devices based on nanoscale magnetic structures.