Single-Electron Tunneling through Molecular Quantum Dots in a Metal-Insulator-Semiconductor Structure
Single-Electron Tunneling through Molecular Quantum Dots in a Metal-Insulator-Semiconductor Structure
复制标题
DOI：
10.1002/adfm.201100220
复制
发表时间：
2011-08-09
影响因子：
19
通讯作者：
Wakayama, Yutaka
中科院分区：
文献类型：
--
作者：
Hayakawa, Ryoma;Hiroshiba, Nobuya;Wakayama, Yutaka
在金属-绝缘体-半导体（MIS）结构中，C-60和酞菁铜（CuPc）分子作为量子点嵌入到绝缘层中，实现了单电子隧穿（SET）.发现SET经由嵌入分子的能级起源于共振隧穿（例如，最高占据分子轨道（HOMO）和最低未占据分子轨道（LUMO））。这些发现表明，SET的阈值电压是可调的，根据分子的能级。此外，SET甚至在接近室温时也可观察到。结果表明，连同这些属性被证明在一个实际的设备配置的事实，分子点到硅MIS结构的集成具有相当大的潜力，实现新的SET设备。此外，这种尝试允许大规模整合单个分子功能。
A sigle-electron tunneling (SET) in a metal-insulator-semiconductor (MIS) structure is demonstrated, in which C-60 and copper phthalocyanine (CuPc) molecules are embedded as quantum dots in the insulator layer. The SET is found to originate from resonant tunneling via the energy levels of the embedded molecules, (e.g., the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO)). These findings show that the threshold voltages for SET are tunable according to the energy levels of the molecules. Furthermore, SET is observable even near room temperature. The results suggest, together with the fact that these properties are demonstrated in a practical device configuration, that the integration of molecular dots into the Si-MIS structure has considerable potential for achieving novel SET devices. Moreover, the attempt allows large-scale integration of individual molecular functionalities.