Ultrathin Zirconium Silicate Films Deposited on Si(100) Using Zr ( O i Pr ) 2 ( thd ) 2 , Si ( O t Bu ) 2 ( thd ) 2 , and Nitric Oxide
Ultrathin Zirconium Silicate Films Deposited on Si(100) Using Zr ( O i Pr ) 2 ( thd ) 2 , Si ( O t Bu ) 2 ( thd ) 2 , and Nitric Oxide
复制标题
使用 Zr ( O i Pr ) 2 ( thd ) 2 、 Si ( O t Bu ) 2 ( thd ) 2 和一氧化氮在 Si(100) 上沉积超薄硅酸锆薄膜
DOI：
10.1149/1.1577339
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
T. Chao
中科院分区：
文献类型：
--
作者：
H. W. Chen;Tiao;D. Landheer;Xiaohua Wu;S. Moisa;G. Sproule;J. K. Kim;W. Lennard;T. Chao
(i-Pr)2(THd)2，Si(Ot-Bu)2(THd)2和NO在脉冲模式金属有机化学气相沉积装置中的应用。采用高分辨电子显微镜、原子力显微镜、X射线光电子能谱和中能离子散射等手段对薄膜的结构、表面粗糙度、化学状态和成分进行了分析。用NO代替O2作为氧化气，不仅减小了界面层的厚度，而且有效地去除了大块薄膜中的碳污染。Si：ZR比为1.3：1的薄膜为非晶态，非晶界面层厚度为0.3~0.6 nm。经尖峰氧退火和60 S氮气退火后，薄膜始终保持非晶态，无相分离，但界面层增厚。X射线光电子能谱(XPS)没有发现薄膜中存在Zr-C键和Zr-Si键，碳浓度为0.1原子%，检测下限为0.1%。由电容-电压分析确定的电滞回线、固定电荷密度和漏电流经850°C后处理后显著改善，显示出作为深亚微米金属氧化物半导体器件的良好特性。
i-Pr)2(tetramethylheptanedione,thd) 2 , Si(O t -Bu)2(thd) 2 and nitric oxide in a pulse-mode metallorganic chemical-vapor deposition apparatus with a liquid injection source. High resolution transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy ~XPS!, and medium energy ion scattering were employed to investigate the structure, surface roughness, chemical state, and composition of the films. The nitric oxide used as oxidizing gas, instead of O2 , not only reduced the thickness of the interfacial layer but also removed the carbon contamination effectively from the bulk of the films. The as-deposited Zr silicate films with a Si:Zr ratio of 1.3:1 were amorphous, with an amorphous interfacial layer 0.3-0.6 nm thick. After a spike anneal in oxygen and a 60 s nitrogen anneal at 850°C, these films remained amorphous throughout without phase separation, but the interfacial layer increased in thickness. No evidence of Zr-C and Zr-Si bonds were found in the films by XPS and carbon concentrations,0.1 atom %, the detection limit, were obtained. The hysteresis, fixed charge density, and leakage current determined from capacitance-voltage analysis improved significantly after postdeposition anneals at 850°C and the films exhibited promising characteristics for deep submicrometer metal-oxidesemiconductor devices.