Three-phase inverter employing PCB embedded GaN FETs
Three-phase inverter employing PCB embedded GaN FETs
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DOI：
10.1109/apec.2018.8341177
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发表时间：
2018-03
期刊：
影响因子：
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通讯作者：
Stephen Savulak;Ben Guo;S. Krishnamurthy
中科院分区：
文献类型：
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作者：
Stephen Savulak;Ben Guo;S. Krishnamurthy
随着应用不断推动逆变器设计变得更加密集，必须重新评估传统的电力电子制造和组装技术，以使硬件更小，更轻。应用新的印刷电路板（PCB）制造技术以在内部层之间物理地嵌入管芯级开关器件使得能够减小逆变器系统的整体封装体积并减小功率迹线长度。此外，宽带隙器件提供的低功耗和高开关频率使其成为高密度逆变器设计的明智选择。本文介绍了我们的努力设计，制造和测试的三相背靠背逆变器与嵌入式GaN FET，旨在证明这种技术的一些预期的好处。
As applications continually push inverter designs to be more dense, traditional power electronic fabrication and assembly techniques must be reevaluated for opportunities to make hardware smaller and lighter. Applying new printed circuit board (PCB) fabrication technology to physically embed die-level switching devices between internal layers enables a reduction in the overall package volume of inverter systems and decreases power trace lengths. In addition, the reduced power dissipation and increased switching frequency afforded by wide bandgap devices makes them a sensible choice for use in high density inverter designs. This paper describes our effort for designing, fabricating, and testing a three-phase back-to-back inverter with embedded GaN FETs, intended to demonstrate some of the expected benefits of this technology.