Observation of anomalous Hall effect in EuO epitaxial thin films grown by a pulse laser deposition
Observation of anomalous Hall effect in EuO epitaxial thin films grown by a pulse laser deposition
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DOI：
10.1063/1.3557050
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发表时间：
2011-02
影响因子：
4
通讯作者：
T. Yamasaki;K. Ueno;A. Tsukazaki;T. Fukumura;M. Kawasaki
中科院分区：
文献类型：
--
作者：
T. Yamasaki;K. Ueno;A. Tsukazaki;T. Fukumura;M. Kawasaki
我们发现用脉冲激光沉积法生长相纯外延EuO薄膜的氧压有一个狭窄但明显的窗口。随着氧压的逐渐降低，材料的电性能由绝缘变为金属，居里温度从70 K提高到120 K。在最高电子密度样品中，在5k时的霍尔电阻中明显观察到异常霍尔贡献。与其他铁磁氧化物相比，饱和异常霍尔电导率（0.2 S/cm）相当高，这可能是由于EuO中强烈的自旋轨道耦合所致。
We have found that there is a narrow but distinct window in oxygen pressure for growing phase-pure epitaxial EuO films by a pulsed laser deposition. With finely decreasing the oxygen pressure, the electrical property is varied from insulating to metallic with an enhancement in Curie temperature from 70 to 120 K. The anomalous Hall contribution was clearly observed in Hall resistance at 5 K in the highest electron density sample. The saturated anomalous Hall conductivity (0.2 S/cm) is rather high in comparison with those of the other ferromagnetic oxides, probably due to strong spin-orbit coupling in EuO.