Thin film reaction of transition metals with germanium
Thin film reaction of transition metals with germanium
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DOI：
10.1116/1.2191861
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发表时间：
2006-05-01
影响因子：
2.9
通讯作者：
Lavoie, C
中科院分区：
文献类型：
--
作者：
Gaudet, S;Detavernier, C;Lavoie, C
本文系统研究了20种过渡金属（Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Fe、Ru、Co、Rh、Ir、Ni、Pd、Pt和Cu）与Ge衬底的热诱导反应，以确定Ge基微电子电路中合适的接触材料。在非晶态Ge和晶态Ge（001）上溅射沉积了名义厚度为30 nm的金属薄膜。利用时间分辨x射线衍射、漫射光散射和电阻测量，在纯化He气氛中，在3℃（-1）的斜坡退火过程中，现场监测了金属- ge反应。这些分析可以确定每种金属-锗体系的相形成顺序，并根据薄片电阻和表面粗糙度确定最有希望的候选材料，用于微电子电路中的一级互连。第一类金属（Ti, Zr, Hf， V， Nb和Ta）只在远高于450摄氏度的温度下与Ge反应，并且容易氧化。另一组（Cr, Mo, Mn, Re, Rh， Ru和Ir）没有形成低电阻相（< 130 mu Omega cm），而W即使在高达1000℃的退火后也没有观察到反应。我们发现Fe， Co, Ni, Pd， Pt和Cu是微电子应用中最有趣的候选物，因为它们在相对较低的温度（150-360℃）下反应形成低电阻相（22-129 mu Omega cm）。其中，NiGe和PdGe在斜坡退火过程中电阻率值最低（22 ~ 30 μ ω cm），且在最宽温度窗下稳定。顺便说一下，我们注意到Cu， Ni和Pd在降低非晶锗的结晶温度方面最有效，在我们的典型斜坡退火中，在3℃s（-1）下可降低高达290℃。(c) 2006年美国真空学会。
A systematic study of the thermally induced reaction of 20 transition metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, and Cu) with Ge substrates was carried out in order to identify appropriate contact materials in Ge-based microelectronic circuits. Thin metal films, nominally 30 nm thick, were sputter deposited on both amorphous Ge and crystalline Ge(001). Metal-Ge reactions were monitored in situ during ramp anneals at 3 degrees C s(-1) in an atmosphere of purified He using time-resolved x-ray diffraction, diffuse light scattering, and resistance measurements. These analyses allowed the determination of the phase formation sequence for each metal-Ge system and the identification of the most promising candidates-in terms of sheet resistance and surface roughness-for their use as first level interconnections in microelectronic circuits. A first group of metals (Ti, Zr, Hf, V, Nb, and Ta) reacted with Ge only at temperatures well above 450 degrees C and was prone to oxidation. Another set (Cr, Mo, Mn, Re, Rh, Ru, and Ir) did not form low resistivity phases (< 130 mu Omega cm) whereas no reaction was observed in the case of W even after annealing at up to 1000 degrees C. We found that Fe, Co, Ni, Pd, Pt, and Cu were the most interesting candidates for microelectronic applications as they reacted at relatively low temperatures (150-360 degrees C) to form low resistivity phases (22-129 mu Omega cm). Among those, two monogermanides, NiGe and PdGe, exhibited the lowest resistivity values (22-30 mu Omega cm) and were stable over the widest temperature window during ramp anneals. In passing, we note that Cu, Ni, and Pd were the most effective in lowering the crystallization temperature of amorphous Ge, by up to 290 degrees C for our typical ramp anneals at 3 degrees C s(-1). (c) 2006 American Vacuum Society.