TEM and electron backscatter diffraction analysis (EBSD) on superconducting nanowires
TEM and electron backscatter diffraction analysis (EBSD) on superconducting nanowires
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DOI：
10.1088/1742-6596/1054/1/012005
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发表时间：
2018-07
期刊：
影响因子：
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通讯作者：
A. Koblischka-Veneva;M. Koblischka;X. Zeng;J. Schmauch;U. Hartmann
中科院分区：
文献类型：
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作者：
A. Koblischka-Veneva;M. Koblischka;X. Zeng;J. Schmauch;U. Hartmann
通过电子背散射衍射（EBSD）分析，电纺，超导纳米线的特征在于有关的晶粒取向，它们的纹理和各自的晶界取向差。Bi 2Sr 2CaCu 2 Ox（Bi-2212）的这种电纺非织造纳米线网络中的各个纳米线是多晶的，具有高达250 nm的平均直径，并且它们的晶粒在20-50 nm范围内。这就要求扫描电子显微镜中的分析具有高的空间分辨率。然而，纳米线的小直径使得新开发的透射EBSD（t-EBSD）技术的应用成为可能，而无需制备TEM切片。在这里，我们提出了个别纳米线和几个EBSD映射Bi-2212纳米线的TEM图像，并比较其微观结构的第一代磁带的细丝。
Electrospun, superconducting nanowires are characterized concerning the grain orientation, their texture and the respective grain boundary misorientations by means of electron backscatter diffraction (EBSD) analysis. The individual nanowires in such electrospun, nonwoven nanowire networks of Bi2Sr2CaCu2Ox (Bi-2212) are polycrystalline, have average diameters up to 250 nm and their grains are in the 20-50 nm range. This requires a high spatial resolution for the analysis in the scanning electron microscope. However, the small diameter of the nanowires enables the application of the newly developed transmission EBSD (t-EBSD) technique without the preparation of TEM slices. Here, we present TEM images of individual nanowires and several EBSD mappings on Bi-2212 nanowires and compare their microstructure to those of filaments of the first generation tapes.