Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff
Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff
复制标题
DOI：
10.1088/0268-1242/22/11/001
复制
发表时间：
2007-11-01
影响因子：
1.9
通讯作者：
Warburton, R. J.
中科院分区：
文献类型：
--
作者：
Curran, A.;Morrod, J. K.;Warburton, R. J.
我们报道了利用外延剥离技术制作的ZnSe基微腔中强激子-光子耦合的观测结果。利用分子束外延生长的ZnSe/Zn 0.9 Cd 0.1 Se量子威尔斯阱，将激子发射波长为1个波长的量子阱转移到反射率为96%的SiO2/Ta 2 O 5反射镜上，形成精细匹配的微腔。我们的角分辨透射光谱的分析揭示了强耦合制度的关键特征：anticrossing与正常模式分裂为23.6毫电子伏，在20 K，复合演化的低和上极化激元和窄的低极化激元线宽附近的共振。每个量子阱的重空穴激子振子强度也被推导为1.78 × 10 ~（13）cm ~（-2）。
We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO2/Ta2O5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 x 10(13) cm(-2).