Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3∕Pb(Zr0.5,Ti0.5)O3 multilayer films derived by chemical solution deposition
Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3∕Pb(Zr0.5,Ti0.5)O3 multilayer films derived by chemical solution deposition
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DOI：
10.1063/1.2120907
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发表时间：
2005-10
影响因子：
4
通讯作者：
Yunqing Li;J. L. Sun;J. Chen;X. Meng;J. Chu
中科院分区：
文献类型：
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作者：
Yunqing Li;J. L. Sun;J. Chen;X. Meng;J. Chu
采用化学溶液沉积法在镀铂硅衬底上生长了BiFeO_3/Pb(Zr0.5，Ti0.5)O3(BFO/PZT)多层膜。剩余极化约为12μC/cm~2，远大于大多数纯BFO薄膜。P-E测试结果表明，与纯PZT薄膜相比，多层膜中存在更多的势垒来影响磁畴壁的运动。通过测量亚开关场下电容与交流电场的关系，也证实了这一结论。介电损耗与频率的关系表明，在高频下，多层膜的介电损耗(tanδ)小于薄膜的介电损耗。磁性测量表明，多层膜是反铁磁性的。
BiFeO3∕Pb(Zr0.5,Ti0.5)O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12μC∕cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tanδ) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic.