Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels
Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels
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DOI：
10.1063/1.4972226
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发表时间：
2016-12
影响因子：
3.2
通讯作者：
T. Matsushima;T. Yasuda;K. Fujita;C. Adachi
中科院分区：
文献类型：
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作者：
T. Matsushima;T. Yasuda;K. Fujita;C. Adachi
在不同温度（Tsub）下加热的衬底上真空沉积有机-无机层状钙钛矿（C6 H5 C2 H4 NH3）2SnI 4薄膜，研究Tsub对其薄膜质量和晶体管性能（空穴迁移率、阈值电压和电流开/关比）的影响。在真空沉积期间在Tsub = 60 °C下适当加热衬底导致具有较大晶粒的更好开发的钙钛矿膜。这些薄膜表现出最好的晶体管性能相比，在其他Tsub制造的薄膜。由于顶部接触/底部栅极晶体管结构中的体电阻的减小，通过减小钙钛矿半导体厚度（t）来进一步增强晶体管性能。通过利用优化的Tsub = 60 °C和t = 31 nm，我们获得了最大改善的空穴迁移率为0.78 ± 0.24 cm 2/V s，约为我们在Tsub = 24 °C和t = 50 nm下制造的初始晶体管的空穴迁移率的5000倍。
Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.