Effect of defects on room-temperature ferromagnetism of Cr-doped ZnO films
Effect of defects on room-temperature ferromagnetism of Cr-doped ZnO films
复制标题
DOI：
10.1016/j.scriptamat.2008.10.002
复制
发表时间：
2009-02
影响因子：
6
通讯作者：
L. Zhuge;Xiaofeng Wu;Zhangxiong Wu;X. M. Chen;Y. Meng
中科院分区：
文献类型：
--
作者：
L. Zhuge;Xiaofeng Wu;Zhangxiong Wu;X. M. Chen;Y. Meng
研究了采用射频磁控溅射法在方晶玻璃衬底上制备的Zn 1 −xCrxO薄膜的微结构和磁性能。结构研究表明，室温下观察到的铁磁性是Cr-ZnO薄膜的本征性质，并不源于任何第二相。实验结果表明，由于单负电荷的Zn空位缺陷，加上Cr掺杂，在Zn 1 −xCrxO薄膜的铁磁起源中起着重要的作用。
We have investigated the microstructure and the magnetic properties of Zn1−xCrxO thin films deposited on squartz glass substrates using radiofrequency magnetron sputtering. The structural investigations demonstrate that the ferromagnetism observed at room temperature is an intrinsic property of Cr–ZnO films, and does not originate from any secondary phase. The experimental results show that defects due to singly negatively charged Zn vacancies, together with Cr doping, plays an important role in the ferromagnetic origin of Zn1−xCrxO thin films.