Space and terrestrial radiation response of silicon carbide power MOSFETs
Space and terrestrial radiation response of silicon carbide power MOSFETs
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DOI：
10.1109/nsrec.2017.8115467
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发表时间：
2017-07
期刊：
影响因子：
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通讯作者：
A. Akturk;J. McGarrity;R. Wilkins;Adam Markowski;Brendan Cusack
中科院分区：
文献类型：
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作者：
A. Akturk;J. McGarrity;R. Wilkins;Adam Markowski;Brendan Cusack
报道了重离子、地面中子和电离剂量辐射对高压碳化硅功率mosfet的影响，以及重离子暴露引起的单事件效应可能导致的失效模式。测试的SiC功率mosfet表现出优异的地面中子辐射响应，其失效时间率显著低于同类硅功率mosfet和igbt，特别是在额定器件电压附近。同样的SiC mosfet也表现出优异的电离剂量辐射响应，阈值电压位移明显低于具有相似氧化物厚度的硅mosfet。然而，SiC功率mosfet受到重离子诱导的单事件效应（SEEs）的严重影响，在重离子暴露期间在高压下突然失效，以及在低压和中压下暴露后应力诱导失效。
Effects of heavy ion, terrestrial neutron and ionizing dose radiation on high voltage silicon carbide (SiC) power MOSFETs are reported along with likely failure modes due to single event effects resulting from heavy ion exposures. The tested SiC power MOSFETs exhibit excellent terrestrial neutron radiation responses with failure in time rates significantly lower than those of comparable silicon power MOSFETs and IGBTs especially near the rated device voltage. The same SiC MOSFETs also exhibit excellent ionizing dose radiation response with threshold voltage shifts significantly lower than those of silicon MOSFETs with similar oxide thicknesses. However the SiC power MOSFETs suffer significantly from heavy ion induced single event effects (SEEs) with sudden failures at high voltages during heavy ion exposure, and post exposure stress induced failures at low and medium voltages.