PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS
PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS
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DOI:
10.1063/1.325382
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发表时间:
1978-01-01
影响因子:
3.2
通讯作者:
FLAMM, DL
中科院分区:
文献类型:
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作者:
MOGAB, CJ;ADAMS, AC;FLAMM, DL