Correlation between optical and electrical performance of mid‐ultraviolet light‐emitting diodes on AlN substrates
Correlation between optical and electrical performance of mid‐ultraviolet light‐emitting diodes on AlN substrates
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AlN衬底上的中紫外发光二极管光学和电学性能的相关性
DOI：
10.1002/pssc.201300686
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
L. Schowalter
中科院分区：
文献类型：
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作者：
C. Moe;G. Garrett;J. Grandusky;Jianfeng Chen;L. E. Rodak;P. Rotella;M. Wraback;L. Schowalter
用时间分辨光致发光和电致发光方法研究了在氮化铝衬底上生长的中紫外光LED，其量子效率和波长范围为250-280 nm。通过测量所有器件的室温内部量子效率，还可以估算辐射寿命和非辐射寿命。观察到的总体趋势包括更长波长的光致发光寿命延长和更高的外部量子效率，这与估计的非辐射寿命随着波长的增加而增加是一致的。尽管有这些趋势，但器件的外量子效率仅随着波长从258 nm增加到279 nm而略有增加，这表明辐射寿命和注入效率的优化也起到了重要作用。(2014Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Mid-ultraviolet LEDs grown on AlN substrates with a range of quantum efficiencies and wavelengths spanning 250 to 280 nm have been investigated by time-resolved photoluminescence and electroluminescence. Through scaling of room temperature internal quantum efficiencies across all devices, radiative and nonradiative lifetimes are also estimated. General trends observed include an increase in PL lifetime for longer wavelength and higher external quantum efficiency devices, consistent with the increase in the estimated nonradiative life-time with increasing wavelength. Despite these trends, the external quantum efficiency of the devices increases only weakly with increasing wavelength from 258 to 279 nm, suggesting that optimization of radiative lifetime and injection efficiency also play an important role. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)