Mid-infrared integrated silicon–germanium ring resonator with high Q-factor
Mid-infrared integrated silicon–germanium ring resonator with high Q-factor
复制标题
具有高品质因数的中红外集成硅锗环形谐振器
作者：
Rémi Armand;M. Perestjuk;Alberto Della Torre;M. Sinobad;A. Mitchell;A. Boes;J. Hartmann;J. Fédéli;V. Reboud;P. Brianceau;A. de Rossi;S. Combrié;C. Monat;C. Grillet
我们报道了一种在中红外波段具有高Q值的硅锗环形谐振腔的实现。在4.18 μm工作波长下，所制作的环具有236000的负载Q值。考虑到组合的波导传播损耗和弯曲损耗，其被测量为低于0.2 dB/cm，在该平台上可以实现甚至更高的Q因子。此外，我们对波导的色散工程应该使这些微环适合非线性光学应用。这些结果为传感应用和中红外范围内的非线性光学铺平了道路。
We report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000 at the operating wavelength of 4.18 µm. Considering the combined waveguide propagation losses and bending losses, which are measured to be below 0.2 dB/cm, even higher Q-factors could be achieved on this platform. Furthermore, our dispersion engineering of the waveguides should make these microrings suitable for nonlinear optical applications. These results pave the way for sensing applications and nonlinear optics in the mid-infrared range.