Wall profile of thick photoresist generated via contact printing
Wall profile of thick photoresist generated via contact printing
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DOI：
10.1109/84.749398
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发表时间：
1999-03-01
影响因子：
2.7
通讯作者：
Gruetzner, G
中科院分区：
文献类型：
--
作者：
Cheng, Y;Lin, CY;Gruetzner, G
通过直接接触或邻近产生的高纵横比图案：LIGA和其他类似工艺中的印刷最近在MEMS领域获得了极大的兴趣。厚膜光刻技术成功的一个关键问题是厚度轮廓的控制。本文从菲涅耳衍射效应和曝光动力学的近似方法出发，讨论了不同类型光刻胶的厚度轮廓控制问题。这种方法导致简单而实用的公式估计壁的轮廓和分辨率的近场光刻厚光刻胶。[313]。
High-aspect-ratio patterns generated by direct contact or proximity: printing in LIGA and other similar processes have recently gained great interest in the field of MEMS. One key issue for a successful thick-film lithography is the control of walt profile, This paper deals with this issue based on an approximation including the effects of Fresnel diffraction and exposure kinetics for various types of photoresist. This approach leads to simple while practical formulas for estimating the wall profile and resolution for the near-field lithography of thick photoresist. [313].