New Electrically Thinned Intrinsic-Channel SOI MOSFET with 0.01 µm Channel Length
New Electrically Thinned Intrinsic-Channel SOI MOSFET with 0.01 µm Channel Length
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新型电薄化本征沟道 SOI MOSFET，沟道长度为 0.01 µm
DOI：
10.1143/jjap.36.1659
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发表时间：
1997
影响因子：
1.5
通讯作者：
M. Koyanagi
中科院分区：
文献类型：
--
作者：
T. Shimatani;S. Pidin;M. Koyanagi
在沟道长度为0.01μm的超小型器件中，即使杂质浓度高于5.0 × 1018 cm-3，沟道区中平均也只有一个杂质原子。因此，由于杂质浓度的统计变化，在晶片内或甚至在芯片内，器件特性在器件与器件之间显著变化。基于MonteCarlo模拟方法研究了沟道区孤立原子对器件特性的影响，提出了一种新的0.01μm SOI MOSFET结构，该结构具有非掺杂沟道，可以抑制统计变化和短沟道效应的影响。
In an ultrasmall device with a channel length of 0.01μm, only one impurity atom on the average exists in the channel region even though the impurity concentration is higher than 5.0 x 10 18 cm -3 . Therefore, the device characteristics significantly change from device to device within a wafer, or even within a chip, due to the statistical variation of the impurity concentration. We investigated the influences of isolated atoms in the channel region on the device characteristics based on a Monte Carlo simulation and propose a new 0.01μm silicon-on-insulator metal oxide semiconductor field-effect transistor (SOI MOSFET) with undoped channel to suppress the influences of statistical variation and the short channel effect.