Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy
Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy
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DOI：
10.1103/physrevb.102.054427
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发表时间：
2020-08-19
影响因子：
3.7
通讯作者：
Kawasuso，A.
中科院分区：
文献类型：
--
作者：
Maekawa，M.;Miyashita，A.;Kawasuso，A.
在这项研究中，Gd离子注入和退火进行了在名义上未掺杂的纤锌矿GaN生长的金属有机化学气相沉积。自旋极化正电子湮没测量结果表明，空位团簇，包括至少12个空位每个集群是主要的正电子捕获中心，在空位团簇中的电子是自旋极化。这些观测结果可以用第一性原理计算来解释。如果考虑空位团簇的存在，则可以支持先前关于Gd注入GaN的缺陷辅助铁磁性的推测。
In this study, Gd ion implantation and annealing were performed atfor nominally undoped wurtzite GaN grown by metal-organic chemical vapor deposition. Spin-polarized positron annihilation measurements showed that vacancy clusters including at least 12 vacancies per cluster were the major positron-trapping centers and that the electrons in the vacancy clusters were spin-polarized. These observations could be explained by first-principles calculations. The previous speculation about the defect-assisted ferromagnetism of Gd-implanted GaN may be supported if vacancy clusters are considered.