A write time of 6 ns for quantum dot based memory structures
A write time of 6 ns for quantum dot based memory structures
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DOI：
10.1063/1.2890731
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发表时间：
2008-03-03
影响因子：
4
通讯作者：
Oncan, N.
中科院分区：
文献类型：
--
作者：
Geller, M.;Marent, A.;Oncan, N.
提出了基于自组织量子点（QD）的存储器件的概念，其实现极快的写入时间，仅受在皮秒范围内的电荷载流子弛豫时间的限制。对于第一个嵌入式InAs/GaAs量子点的器件结构，6纳秒的写入时间被证明。含有GaSb/GaAs QD的类似结构显示出14 ns的写入时间。这些写入时间与局部化能量无关（例如，存储时间），并且目前仅受实验设置和器件的RC低通的寄生截止频率的限制。(c)2008年美国物理学会。
The concept of a memory device based on self-organized quantum dots (QDs) is presented, enabling extremely fast write times, limited only by the charge carrier relaxation time being in the picosecond range. For a first device structure with embedded InAs/GaAs QDs, a write time of 6 ns is demonstrated. A similar structure containing GaSb/GaAs QDs shows a write time of 14 ns. These write times are independent of the localization energy (e.g., storage time) of the charge carriers and at the moment are limited only by the experimental setup and the parasitic cutoff frequency of the RC low pass of the device. (c) 2008 American Institute of Physics.