K. Goto, J. Murota, F. Honma, T. Matsuura, and Y. Sawada,: "A Novel Fabrication Method for Short Channel MOSFET's Using Self-Aligned Ultrashallow Junction Formation by Selective Si_<1-X>Ge_XCVD," Extended Abstracts of the 1994 International Conference on
K. Goto, J. Murota, F. Honma, T. Matsuura, and Y. Sawada,: "A Novel Fabrication Method for Short Channel MOSFET's Using Self-Aligned Ultrashallow Junction Formation by Selective Si_<1-X>Ge_XCVD," Extended Abstracts of the 1994 International Conference on
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K. Goto、J. Murota、F. Honma、T. Matsuura 和 Y. Sawada，“通过选择性 Si_<1-X>Ge_XCVD 形成自对准超浅结的短沟道 MOSFET 的新颖制造方法”，扩展
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