Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires
Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires
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DOI：
10.1016/s0009-2614(02)01145-4
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发表时间：
2002-09-02
影响因子：
2.8
通讯作者：
Lee, CJ
中科院分区：
文献类型：
--
作者：
Lyu, SC;Zhang, Y;Lee, CJ
采用简单的金属气相沉积方法，在极低温度（450℃）下，成功地在一氧化镍（NiO）催化氧化铝基体上合成了高密度排列整齐的单晶氧化锌（ZnO）纳米线。单晶ZnO纳米线具有六方纤锌矿结构，直径约55 mn，长度可达2.6 mm。在325缸激发下的光致发光光谱显示出3.26 eV的紫外辐射和2.44 eV的绿色辐射。紫外发射带和光致空穴的近带边跃迁和单电离氧空位与光致空穴的径向结合导致了紫外发射带和绿色发射带的形成。(C) 2002 Elsevier Science B.V.版权所有
Well-aligned single-crystalline zinc oxide (ZnO) nanowires with high density were successfully synthesized on nickel monoxide (NiO) catalyzed alumina substrate through a simple metal-vapor deposition method at an extremely low temperature (450degreesC). The single-crystalline ZnO nanowires had a hexagonal wurzite structure and diameters of about 55 mn, and lengths up to 2.6 mum. The photoluminescence spectra under excitation 325 urn showed a ultra-violet (UV) emission at 3.26 eV and a green emission at 2.44 eV. The UV emission and green emission bands were attributed to near band-edge transition and radial combination of a singly ionized oxygen vacancy with a photo-induced hole, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.