RF MEMS Based 60 GHz Variable Attenuator
RF MEMS Based 60 GHz Variable Attenuator
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基于 RF MEMS 的 60 GHz 可变衰减器
DOI：
10.1109/imws-amp.2018.8457154
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
R. Mansour
中科院分区：
文献类型：
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作者：
Navjot K. Khaira;Tejinder Singh;R. Mansour
本文提出了一种利用横向射频（RF）微机电系统（MEMS）电容型开关实现的毫米波可变衰减器。建议的可变衰减器包括两个基于CPW的正交混合耦合器与电容型热致动横向MEMS开关配对。施加到V形执行器的电压调节接触板的精确机械运动，从而限定衰减范围。在中心频率为60 GHz时，衰减随外加电压单调变化，范围为4 dB ~ 20 dB。回波损耗优于20 dB以上的带宽为4 GHz的实现。所提出的制造工艺提供了在SOI衬底上集成横向致动器、可移动板、RF CPW线和CPW混合耦合器以及其他支撑结构的能力。
This paper presents a millimeter-wave variableattenuator realized using a lateral radio-frequency (RF) microelectromechanical systems (MEMS) capacitive type switch. The proposed variable attenuator comprises of two CPW based quadrature hybrid couplers paired with capacitive type thermally-actuated lateral MEMS switches. The voltage applied to the Chevron actuator regulates the precise mechanical movement of the contact plate and hence defines the range of attenuation. At the center frequency of 60 GHz, the attenuation monotonically varied from 4 dB to 20 dB with the applied voltage. Return loss better than 20 dB over a bandwidth of 4 GHz is achieved. The proposed fabrication process provides the ability to integrate the lateral actuators, movable plates, RF CPW lines, and the CPW hybrid coupler and other supporting structures on an SOI substrate.