Measurement of Stresses Using Fluorescence in an Optical Microprobe: Stresses around Indentations in a Chromium‐Doped Sapphire
Measurement of Stresses Using Fluorescence in an Optical Microprobe: Stresses around Indentations in a Chromium‐Doped Sapphire
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在光学微探针中使用荧光测量应力：掺铬蓝宝石中压痕周围的应力
DOI：
10.1111/j.1151-2916.1990.tb06435.x
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发表时间：
1990
影响因子：
3.9
通讯作者：
D. Clarke
中科院分区：
文献类型：
--
作者：
S. Molis;D. Clarke
介绍了一种测量横向空间范围约为2 μm的正负应力的方法。该技术使用拉曼微探针实现，通过测量0.06 wt%-铬掺杂蓝宝石硬度压痕内和周围的尖锐r发光线（2Ā和Ē到4A2辐射跃迁）的频率变化来证明。根据观察到的频移，测量了硬度压痕取样区域、压痕周围的复杂应力场以及裂纹尖端的应力。
A technique for measuring stress (positive and negative) with a lateral spatial extent of approximately 2 μm is introduced. The technique, implemented using a Raman microprobe, is demonstrated with measurements of the frequency shift of the sharp, R-luminescence lines (2Ā and Ē to 4A2 radiative transitions) in, and around, a hardness indentation in a 0.06-wt%-chromium doped sapphire. From the observed frequency shifts the stresses in regions sampled in the hardness impression, in the complex stress field surrounding it, and at the tip of a crack are measured.