Bottom-up nanoscale patterning and selective deposition on silicon nanowires
Bottom-up nanoscale patterning and selective deposition on silicon nanowires
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DOI：
10.1088/1361-6528/ac3bed
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发表时间：
2021-11
期刊：
影响因子：
3.5
通讯作者：
Amar T. Mohabir;Daniel Aziz;A. Brummer;Kathleen E Taylor;E. Vogel;M. Filler
中科院分区：
文献类型：
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作者：
Amar T. Mohabir;Daniel Aziz;A. Brummer;Kathleen E Taylor;E. Vogel;M. Filler
我们展示了一个自下而上的过程编程的同轴薄膜的沉积对准的半导体纳米线的底层掺杂剂分布。我们的工艺协同结合了三种不同的方法-气-液-固纳米线生长，选择性同轴光刻通过表面蚀刻（SCALES），和区域选择性原子层沉积（AS-ALD）-成一个有凝聚力的整体。在这里，我们研究硅纳米线上的ZrO 2作为一个模型系统。首先生长具有轴向调制的n-Si/i-Si掺杂剂分布的Si纳米线。SCALES然后在n-Si区域上产生同轴聚（甲基丙烯酸甲酯）（PMMA）掩模。随后的ZrO 2的AS-ALD发生在暴露的i-Si区域上，而不是发生在被PMMA掩蔽的那些区域上。我们展示了纳米线掺杂剂分布、PMMA掩模和ZrO 2膜之间的空间关系，证实了该过程的可编程性。我们工艺的纳米级分辨率加上大量可用的AS-ALD化学物质，为使用完全自下而上的方法生产结构复杂的纳米级材料和电子器件提供了一系列未来机会。
We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods—vapor–liquid–solid nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD)—into a cohesive whole. Here, we study ZrO2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.