Active pixel sensors in high-voltage CMOS technologies for ATLAS
Active pixel sensors in high-voltage CMOS technologies for ATLAS
复制标题
ATLAS 采用高压 CMOS 技术的有源像素传感器
DOI：
10.1088/1748-0221/7/08/c08002
复制
发表时间：
2012
影响因子：
1.3
通讯作者：
I. Perić
中科院分区：
文献类型：
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作者：
I. Perić
商业CMOS技术中的高压粒子探测器是一种允许使用高度分辨率的低成本，薄和耐辐射的检测器原因，我们将此检测器类型称为“智能二极管”阵列 - SDA。在开发的原理验证阶段，我们证明了辐射公差为1015 neq/cm2，几乎是100％检测效率和A大约3μm的空间分辨率。在AMS 180 nm高压工艺中实现的检测器HV2FEI4可以通过电容或碰撞键入来建立检测器和读取芯片之间的接触。
High-voltage particle detectors in commercial CMOS technologies are a detector family that allow implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. Their unique property is that the pixel electronic is embedded inside the sensor diodes. For this reason, we refer to this detector type as the "smart diode'' array — SDA. In the proof-of-principle phase of the development, we have demonstrated a radiation tolerance of 1015 neq/cm2, nearly 100% detection efficiency and a spatial resolution of about 3 μm. Thanks to its high radiation tolerance, the SDA technology represents an interesting option for sLHC upgrades or CLIC detector readout. In order to test the concept, within ATLAS-upgrade R&D, we are currently studying an active pixel detector demonstrator HV2FEI4, implemented in AMS 180 nm high-voltage process. The contacts between the detector- and readout chip can be established either capacitively or by bump-bonding.