Fabrication of highly reflecting epitaxy-ready Si-SiO/sub 2/ Bragg reflectors
Fabrication of highly reflecting epitaxy-ready Si-SiO/sub 2/ Bragg reflectors
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高反射外延就绪 Si-SiO/sub 2/布拉格反射器的制造
DOI：
10.1109/lpt.2005.850005
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发表时间：
2005
影响因子：
2.6
通讯作者：
F. Kaertner
中科院分区：
文献类型：
--
作者：
S. Akiyama;F. Grawert;J. Liu;K. Wada;G. Celler;L. Kimerling;F. Kaertner
提出了一种与互补金属氧化物光刻兼容的顶层为晶体的高反射Si-SiO/sub 2/ Bragg反射镜的制备工艺。它仅包括一个晶片键合步骤，并允许随后在反射镜上进行外延生长。展示了中心波长为1400 nm的六对反射镜，99%带宽为700 nm，表面粗糙度为0.136 nm。
A complementary metal-oxide-semiconductor-compatible process for fabrication of highly reflecting Si-SiO/sub 2/ Bragg mirrors with a crystalline top layer was developed. It comprises only one step of wafer-bonding and allows for subsequent epitaxial growth on the mirror. A six-pair reflector centered at 1400 nm with a 99% bandwidth of 700 nm and a surface roughness of 0.136 nm is demonstrated.