Defect density of crystalline Si films fabricated by high-speed zone melting crystallization for solar cells
Defect density of crystalline Si films fabricated by high-speed zone melting crystallization for solar cells
复制标题
太阳能电池用高速区熔结晶制备晶硅薄膜的缺陷密度
DOI：
10.1109/pvsc.2002.1190521
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
H. Komiyama
中科院分区：
文献类型：
--
作者：
S. Yokoyama;M. Ihara;H. Hashizume;C. Yokoyama;H. Komiyama
利用电子自旋共振（ESR）技术研究了非晶Si（a-Si）高速区熔结晶（ZMC）和多晶硅（poly-Si）高速区熔再结晶（ZMR）制备的晶态Si薄膜的缺陷密度。对于1470/spl deg/C至1570/spl deg/C的下加热器温度范围和0.7-4.5 mm/s的上加热器扫描速度范围，双晶结构a-Si ZMC膜（SiO/sub 2/膜/Si膜/SiO/sub 2/膜）的晶体缺陷密度低于双晶结构多晶硅ZMR膜的晶体缺陷密度。即使在7.0mm/s的高扫描速度下，体a-Si ZMC薄膜的缺陷密度也低于ESR的检测限。因此，a-Si ZMC膜可用于制造太阳能电池，所述太阳能电池具有比通过涉及多晶硅ZMR膜的当前工艺制造的太阳能电池更高的效率。
The defect density of crystalline Si films fabricated by high-speed zone melting crystallization (ZMC) of amorphous Si (a-Si) and by high-speed zone melting re-crystallization (ZMR) of polycrystalline Si (poly-Si) was investigated by using electron spin resonance (ESR). The crystal defect density of the sandwich-structured a-Si ZMC films (SiO/sub 2/ film/Si film/SiO/sub 2/ film) was lower than that of the sandwich-structured poly-Si ZMR films for a lower-heater temperature range of 1470/spl deg/C to 1570/spl deg/C and for an upper-heater scan-speed range of 0.7-4.5 mm/s. The defect density of the bulk a-Si ZMC films was below the detection limit of ESR, even at high scan speed of 7.0 mm/s. Therefore, a-Si ZMC films can be used to fabricate solar cells that have an efficiency higher than those fabricated by current processes involving poly-Si ZMR films.