Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.
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分子束外延生长的 InPBi 薄膜的结构和光学表征
DOI：
10.1186/1556-276x-9-24
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发表时间：
2014-01-13
影响因子：
--
通讯作者：
Wang S
中科院分区：
文献类型：
--
作者：
Gu Y;Wang K;Zhou H;Li Y;Cao C;Zhang L;Zhang Y;Gong Q;Wang S
通过气源分子束外延在 InP 上生长 InPBi 薄膜。通过卢瑟福背散射光谱法测定最大 Bi 成分为 2.4%。 X 射线衍射测量显示 Bi 成分高达 1.4% 时具有良好的结构质量，并且 Bi 含量较高时具有部分松弛结构。带隙通过光学吸收测量，Bi 掺入引起的带隙减小估计约为 56 meV/Bi%。对于xBi< 2.4%的样品，在室温下观察到强且宽的光致发光信号。 PL 峰值位置从 1.4 到 1.9 μm 变化，远低于测量的 InPBi 带隙。
InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples withxBi< 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.