GaAsSbN: a new low-bandgap material for GaAs substrates
GaAsSbN: a new low-bandgap material for GaAs substrates
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GaAsSbN：用于GaAs衬底的新型低带隙材料
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
J. Harmand
中科院分区：
文献类型：
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作者：
G. Ungaro;G. Roux;R. Teissier;J. Harmand
本文研究了一种在GaAs衬底上生长的新型低禁带Ⅲ-Ⅴ族化合物（GaAsSbN）。应变量子威尔斯实现了分子束外延与氮等离子体源。研究了Sb含量对氮掺入水平的影响，没有发现强烈的依赖性。这种材料为在GaAs衬底上开发1.3和1.55 /spl μ/m激光源提供了一种有趣的InGaAsN替代品：GaAs/sub 0.729/Sb/sub 0.259/N/sub 0.012//GaAs量子阱显示出长达1.52 μ/m的室温光致发光峰值波长。在生长后退火之后，该发射被转移到1.3 /spl mu/m。
A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investigated. Strained quantum wells were realised by molecular beam epitaxy with a nitrogen plasma source. The influence of Sb content on the level of nitrogen incorporation has been examined and no strong dependence was found. This material offers an interesting alternative to InGaAsN for developing 1.3 and 1.55 /spl mu/m laser sources on GaAs substrates: a GaAs/sub 0.729/Sb/sub 0.259/N/sub 0.012//GaAs quantum well has exhibited a room-temperature photoluminescence peak wavelength as long as 1.52 /spl mu/m. This emission is shifted to 1.3 /spl mu/m after post-growth annealing.