ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time
ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time
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具有纳秒响应时间的基于 ZnSTe 的肖特基势垒紫外探测器
DOI：
10.1063/1.121692
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
G. Wong
中科院分区：
文献类型：
--
作者：
Z. H. Ma;I. Sou;K. Wong;Z. Yang;G. Wong
采用两步分子束外延生长方法在 GaP(100) 上制造基于 ZnSTe 的肖特基势垒光伏探测器阵列。这些探测器表现出可见盲和紫外线 (UV) 敏感响应，在 320 nm 处的峰值紫外线响应度为 0.13 A/W 和 1.2×106 V/W。这些探测器的内置电势确定为 1.7 V。400×400μm2 探测器的时间光电流响应测得为 1.2 ns，明显受到探测器结构的电阻电容 (rc) 常数的限制。
ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.2×106 V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400×400 μm2 detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure.